Au-induced giant faceting of vicinal Si(001)

被引：22

作者：

Horn-von Hoegen, M

Heringdorf, FJMZ

Hild, R

Zahl, P

Schmidt, T

Bauer, E

机构：

[1] Leibniz Univ Hannover, Inst Festkorperphys, D-30167 Hannover, Germany

[2] Sincrotrone Trieste, I-34012 Basovizza, TS, Italy

[3] Arizona State Univ, Dept Phys & Astron, Tempe, AZ 85287 USA

来源：

SURFACE SCIENCE | 1999年 / 433卷

关键词：

faceting; gold; morphology; silicon; step bunching; steps; vicinal;

D O I：

10.1016/S0039-6028(99)00459-8

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Au-induced faceting on 4 degrees vicinal Si(001) has been studied with in situ low energy electron microscopy and scanning tunneling microscopy; the surface decomposes into areas that are perfectly flat with a (001)-orientation and (119)-facets. Above a critical Au coverage extremely elongated (001) super-terraces propagate with a speed of crystallisation of up to 100 mu m s(-1). The width and area of (001) terraces increase linearly with additional coverage. Conservation of the macroscopic miscut requires step bunching and facet formation. The driving force for the phase separation is an An-induced reconstruction on Si(001). (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：475 / 480

页数：6

共 10 条

[1] LOW-ENERGY-ELECTRON MICROSCOPY [J].