Controlled growth and subsequent chemical modification of poly(glycidyl methacrylate) brushes on silicon wafers

被引:124
作者
Edmondson, S [1 ]
Huck, WTS [1 ]
机构
[1] Univ Cambridge, Dept Chem, Melville Lab Polymer Synth, Cambridge CB2 1EW, England
关键词
D O I
10.1039/b312513k
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The controlled growth of poly(glycidyl methacrylate) (PGMA) and poly(GMA-co-MMA) brushes by atom transfer radical polymerization (ATRP) in methanol/water has been demonstrated on silicon wafer surfaces. A polymerization system using copper(I) bromide, copper(II) chloride and 2,2'-dipyridyl was found to produce a nearly linear rate of growth for times of up to 4 h, giving brushes of up to 120 nm thickness. Reinitiation of these brushes to grow further PGMA demonstrated the living nature of the polymerization system. A trichlorosilane-functional initiator was used, and it was found that brushes grown from initiator layers deposited in the presence of a small amount of triethylamine were less rough and showed more linear growth with time. The reaction of the pendant epoxide group of these brushes with octylamine from solution was demonstrated.
引用
收藏
页码:730 / 734
页数:5
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