Evaluation of micro-defects by DRAM data retention characteristics measurement

被引：4

作者：

Miyoshi, K ^{[1
]}

Terashima, K ^{[1
]}

Muramatsu, Y ^{[1
]}

Nishio, N ^{[1
]}

Murotani, T ^{[1
]}

Saito, S ^{[1
]}

机构：

[1] NEC CORP LTD, MICROELECT RES LABS, TSUKUBA, IBARAKI 305, JAPAN

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1997年 / 127卷

关键词：

D O I：

10.1016/S0168-583X(96)00855-5

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The influence of micro-defects induced intentionally by Si+ ion implantation was investigated using data retention characteristics of dynamic random access memory (DRAM). The defect formation was controlled by Si+ implantation and subsequent annealing conditions. Micro-defects such as {311} defects having a size below 50 nm degraded the junction leakage current and data retention characteristics. Data retention characteristics was also affected by the existence of micro-defects such as point defect or its clusters, although the junction leakage current was low enough compared with unimplanted samples.

引用

页码：78 / 81

页数：4

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