Bandgap photoluminescence of semiconducting single-wall carbon nanotubes

被引：25

作者：

Lauret, JS

Voisin, C

Cassabois, G

Roussignol, P

Delalande, C

Filoramo, A

Capes, L

Valentin, E

Jost, O

机构：

[1] Ecole Normale Super, LPMC, F-75005 Paris, France

[2] CEA, Motorola Labs Paris, Espace Technol St Aubin, Lab Elect Mol, F-91193 Gif Sur Yvette, France

[3] Tech Univ Dresden, Inst Werkstoffwissensch, D-01062 Dresden, Germany

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2004年 / 21卷 / 2-4期

关键词：

carbon nanotubes; optics; photoluminescence;

D O I：

10.1016/j.physe.2003.11.182

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report the observation of photoluminescence across the band gap of semiconducting carbon nanotubes encased in organic micelles at room temperature, for a large set of growth conditions and environment. The key point for observing luminescence is to produce samples where nanotubes are isolated from each other and from the substrate. Moreover, we demonstrate that photoluminescence is a sensitive tool for probing the existence of structural or chemical defects. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：1057 / 1060

页数：4

共 16 条

[11] Surface defect site density on single walled carbon nanotubes by titration [J].