Template-directed vapor-liquid-solid growth of silicon nanowires

被引:65
作者
Lew, KK [1 ]
Reuther, C
Carim, AH
Redwing, JM
Martin, BR
机构
[1] Penn State Univ, Dept Mat Sci & Engn, Inst Mat Res, University Pk, PA 16802 USA
[2] Penn State Univ, Dept Chem, University Pk, PA 16802 USA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2002年 / 20卷 / 01期
关键词
D O I
10.1116/1.1430240
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The synthesis of Si nanowires in nanoporous anodic alumina membranes was demonstrated using a combination of Au electrodeposition and vapor-liquid-solid growth at 500 degreesC using SiH4 as the Si source. The average diameter of the nanowires was 200+/-54 nm which was close to the pore size distribution of the membranes. High-resolution transmission electron microscopy revealed that the nanowires consist of a crystalline Si core, oriented in the 100 or (211) growth direction, with a thin (<3 nm) native oxide coating. In this process, Au terminates both ends of the growing wires, resulting in the formation of Au-Si-Au nanowires. (C) 2002 American Vacuum Society.
引用
收藏
页码:389 / 392
页数:4
相关论文
共 27 条
  • [1] NANOWIRES FORMED IN ANODIC OXIDE NANOTEMPLATES
    ALMAWLAWI, D
    LIU, CZ
    MOSKOVITS, M
    [J]. JOURNAL OF MATERIALS RESEARCH, 1994, 9 (04) : 1014 - 1018
  • [2] LUMINESCENCE OF SILICON MATERIALS - CHAINS, SHEETS, NANOCRYSTALS, NANOWIRES, MICROCRYSTALS, AND POROUS SILICON
    BRUS, L
    [J]. JOURNAL OF PHYSICAL CHEMISTRY, 1994, 98 (14) : 3575 - 3581
  • [3] Silicon nanowire devices
    Chung, SW
    Yu, JY
    Heath, JR
    [J]. APPLIED PHYSICS LETTERS, 2000, 76 (15) : 2068 - 2070
  • [4] Functional nanoscale electronic devices assembled using silicon nanowire building blocks
    Cui, Y
    Lieber, CM
    [J]. SCIENCE, 2001, 291 (5505) : 851 - 853
  • [5] Carbon nanotubes as molecular quantum wires
    Dekker, C
    [J]. PHYSICS TODAY, 1999, 52 (05) : 22 - 28
  • [6] Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices
    Duan, XF
    Huang, Y
    Cui, Y
    Wang, JF
    Lieber, CM
    [J]. NATURE, 2001, 409 (6816) : 66 - 69
  • [7] FITZER E, 1991, J PHYS IV, V1, P143
  • [8] FUNDAMENTAL ASPECTS OF VLS GROWTH
    GIVARGIZOV, EI
    [J]. JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) : 20 - 30
  • [9] GROWTH AND OPTICAL-PROPERTIES OF NANOMETER-SCALE GAAS AND INAS WHISKERS
    HIRUMA, K
    YAZAWA, M
    KATSUYAMA, T
    OGAWA, K
    HARAGUCHI, K
    KOGUCHI, M
    KAKIBAYASHI, H
    [J]. JOURNAL OF APPLIED PHYSICS, 1995, 77 (02) : 447 - 462
  • [10] Control of thickness and orientation of solution-grown silicon nanowires
    Holmes, JD
    Johnston, KP
    Doty, RC
    Korgel, BA
    [J]. SCIENCE, 2000, 287 (5457) : 1471 - 1473