Direct observation of domain wall scattering in patterned Ni80Fe20 and Ni nanowires by current-voltage measurements -: art. no. 127201

被引:66
作者
Lepadatu, S [1 ]
Xu, YB [1 ]
机构
[1] Univ York, Dept Elect, Spintron Lab, York YO10 5DD, N Yorkshire, England
基金
英国工程与自然科学研究理事会;
关键词
D O I
10.1103/PhysRevLett.92.127201
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We present measurements of domain wall resistivity, pinned by nanoconstrictions in single layer ferromagnetic wires of Ni80Fe20 and Ni. Unpinning domain walls from the constriction by current-induced switching allows for an unambiguous measurement of their resistivity changes, namely, 1.7% in Ni80Fe20 and 1.82% in Ni and both positive, which supports the theory of spin-dependent impurity scattering. By deriving an empirical relation for the various constriction widths, the large percentage changes of resistivity in ballistic nanocontacts are reproduced, showing a correlation between domain wall magnetoresistance and ballistic magnetoresistance.
引用
收藏
页码:127201 / 1
页数:4
相关论文
共 22 条
[2]   Universal scaling of ballistic magnetoresistance in magnetic nanocontacts -: art. no. 287203 [J].
Chung, SH ;
Muñoz, M ;
García, N ;
Egelhoff, WF ;
Gomez, RD .
PHYSICAL REVIEW LETTERS, 2002, 89 (28)
[3]   Spin accumulation and domain wall magnetoresistance in 35 nm Co wires [J].
Ebels, U ;
Radulescu, A ;
Henry, Y ;
Piraux, L ;
Ounadjela, K .
PHYSICAL REVIEW LETTERS, 2000, 84 (05) :983-986
[4]   OBSERVATION OF S-D EXCHANGE FORCE BETWEEN DOMAIN-WALLS AND ELECTRIC-CURRENT IN VERY THIN PERMALLOY-FILMS [J].
FREITAS, PP ;
BERGER, L .
JOURNAL OF APPLIED PHYSICS, 1985, 57 (04) :1266-1269
[5]   Magnetoresistance in excess of 200% in ballistic Ni nanocontacts at room temperature and 100 Oe [J].
García, N ;
Muñoz, M ;
Zhao, YW .
PHYSICAL REVIEW LETTERS, 1999, 82 (14) :2923-2926
[6]   Giant magnetoresistive effects in a single element magnetic thin film [J].
Gregg, JF ;
Allen, W ;
Ounadjela, K ;
Viret, M ;
Hehn, M ;
Thompson, SM ;
Coey, JMD .
PHYSICAL REVIEW LETTERS, 1996, 77 (08) :1580-1583
[7]   Switching a spin valve back and forth by current-induced domain wall motion [J].
Grollier, J ;
Boulenc, P ;
Cros, V ;
Hamzic, A ;
Vaurès, A ;
Fert, A ;
Faini, G .
APPLIED PHYSICS LETTERS, 2003, 83 (03) :509-511
[8]   Switching the magnetic configuration of a spin valve by current-induced domain wall motion [J].
Grollier, J ;
Lacour, D ;
Cros, V ;
Hamzic, A ;
Vaurès, A ;
Fert, A ;
Adam, D ;
Faini, G .
JOURNAL OF APPLIED PHYSICS, 2002, 92 (08) :4825-4827
[9]   EXCHANGE FORCES BETWEEN DOMAIN-WALL AND ELECTRIC-CURRENT IN PERMALLOY-FILMS OF VARIABLE THICKNESS [J].
HUNG, CY ;
BERGER, L .
JOURNAL OF APPLIED PHYSICS, 1988, 63 (08) :4276-4278
[10]   Domain wall pinning in narrow ferromagnetic ring structures probed by magnetoresistance measurements -: art. no. 097202 [J].
Kläui, M ;
Vaz, CAF ;
Rothman, J ;
Bland, JAC ;
Wernsdorfer, W ;
Faini, G ;
Cambril, E .
PHYSICAL REVIEW LETTERS, 2003, 90 (09) :4-097202