Universal scaling of ballistic magnetoresistance in magnetic nanocontacts -: art. no. 287203

被引：42

作者：

Chung, SH

Muñoz, M

García, N

Egelhoff, WF

Gomez, RD ^{[1
]}

机构：

[1] Univ Maryland, Dept Elect & Comp Engn, College Pk, MD 20742 USA

[2] Univ Maryland, Dept Phys, College Pk, MD 20742 USA

[3] Lab Phys Sci, College Pk, MD 20740 USA

[4] CSIC, Lab Fis Sistemas Pequenos & Nanotecnol, E-28006 Madrid, Spain

[5] Natl Inst Sci & Technol, Gaithersburg, MD 20899 USA

来源：

PHYSICAL REVIEW LETTERS | 2002年 / 89卷 / 28期

关键词：

D O I：

10.1103/PhysRevLett.89.287203

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We show that ballistic magnetoresistance exhibits universal scaling in atomic or nanometer scale contacts. Plotting the data as conductance, we find that, if the maximum magnetoconductance is normalized to unity and the conductance is scaled with the conductivity of the bulk material, the data fall in a narrow region, independent of the nanocontact materials, for our four data sets and four from the literature. The results agree with a theory that takes into account spin-scattering within a magnetic-domain wall.

引用

页数：4

共 20 条

[1]

[Anonymous], ZH EKSP TEOR FIZ

[2] Low voltage I-V characteristics in magnetic tunneling junctions [J].