Angled-facet S-bend semiconductor optical amplifiers for high-gain and large-extinction ratio

被引:22
作者
Kitamura, S [1 ]
Hatakeyama, H
Tamanuki, T
Sasaki, T
Komatsu, K
Yamaguchi, M
机构
[1] NEC Corp Ltd, Cpd Semicond Device Div, Nakahara Ku, Kawasaki, Kanagawa 2110011, Japan
[2] NEC Corp Ltd, Optoelect & High Frequency Device Res Labs, Tsukuba, Ibaraki 3050841, Japan
[3] NEC Corp Ltd, ULSI Device Dev Labs, Otsu, Shiga 5200833, Japan
关键词
cross connect; optical gate; optical switch; selective MOVPE; semiconductor optical amplifier; SOA array; spot-size converter;
D O I
10.1109/68.769708
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The extinction ratio of an optical gate with a spot-size-converter-integrated semiconductor optical amplifier (SSC-SOA) is deteriorated following the direct coupling of unguided light between the input and output fibers, In this letter, an S-bend waveguide structure is introduced into an active waveguide to suppress such direct coupling. Angled facet structures are also introduced for obtaining low facet reflectivity. The fabricated SSC-SOA operating at 1.55-mu m wavelength achieves an extinction ratio up to 70 dB and a fiber-to-fiber gain of 20 dB.
引用
收藏
页码:788 / 790
页数:3
相关论文
共 7 条
[1]  
HATAKEYAMA H, 1997, 2 OECC SEOUL KOR
[2]  
HENM N, 1996, OSA PHOTONICS SWITCH, V1, P14
[3]   VERY-LOW POWER-CONSUMPTION SEMICONDUCTOR OPTICAL AMPLIFIER ARRAY [J].
KITAMURA, S ;
KOMATSU, K ;
KITAMURA, M .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1995, 7 (02) :147-148
[4]   SELECTIVE METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF INGAASP/INP LAYERS WITH BANDGAP ENERGY CONTROL IN INGAAS/INGAASP MULTIPLE-QUANTUM-WELL STRUCTURES [J].
SASAKI, T ;
KITAMURA, M ;
MITO, I .
JOURNAL OF CRYSTAL GROWTH, 1993, 132 (3-4) :435-443
[5]  
TAKAHASHI S, 1996, OSA PHOTONICS SWITCH
[6]  
YOSHIMOTO N, 1997, OSA TRENDS OPT PHOT, V16, P266
[7]   FABRICATION AND PERFORMANCE OF 1.5-MU-M GAINASP TRAVELING-WAVE LASER-AMPLIFIERS WITH ANGLED FACETS [J].
ZAH, CE ;
OSINSKI, JS ;
CANEAU, C ;
MENOCAL, SG ;
REITH, LA ;
SALZMAN, J ;
SHOKOOHI, FK ;
LEE, TP .
ELECTRONICS LETTERS, 1987, 23 (19) :990-992