Observation and analysis of breakdown of magnetic tunnel junctions

被引：16

作者：

Oepts, W

Verhagen, HJ

de Mooij, DB

Zieren, V

Coehoorn, R

de Jonge, WJM

机构：

[1] Eindhoven Univ Technol, Dept Phys, NL-5600 MB Eindhoven, Netherlands

[2] Eindhoven Univ Technol, COBRA, NL-5600 MB Eindhoven, Netherlands

[3] Philips Res Labs, NL-5656 AA Eindhoven, Netherlands

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 1999年 / 198-99卷

关键词：

magnetic tunnel junctions; dielectric breakdown; magnetoresistance;

D O I：

10.1016/S0304-8853(98)01048-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

At voltages larger than 1.2 V Co/Al(2)O(3)/Co(-Fe) magnetic tunnel junctions show almost immediate breakdown, leading to a decrease in (magneto) resistance. The position of the shorts formed is visualized by making use of a liquid crystal film on top of the junction. The breakdown voltages of a series of nominally identical junctions measured in a voltage-ramp experiment increased with larger ramp rate. The extrapolated lifetime, at lower voltages, is evaluated. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：164 / 166

页数：3

共 6 条

[1] A new model for the field dependence of intrinsic and extrinsic time-dependent dielectric breakdown [J].