Dielectric breakdown of ferromagnetic tunnel junctions

被引：64

作者：

Oepts, W

Verhagen, HJ

de Jonge, WJM

Coehoorn, R

机构：

[1] Eindhoven Univ Technol, Dept Phys, NL-5600 MB Eindhoven, Netherlands

[2] Eindhoven Univ Technol, COBRA, NL-5600 MB Eindhoven, Netherlands

[3] Philips Res Labs, NL-5656 AA Eindhoven, Netherlands

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 16期

关键词：

D O I：

10.1063/1.122462

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The time-dependent dielectric breakdown of Co/Al2O3/Co-(Fe) magnetic tunnel junctions is investigated. At voltages larger than 1.2 V, almost immediate breakdown of the junction is observed, leading to a decreased (magneto)resistance. The shorts, which are local hot spots, were visualized by making use of a liquid crystal film on top of the junction. The breakdown voltages of a series of nominally identical tunnel junctions measured in a voltage-ramp experiment are shown to increase with increasing ramp speed. The results are analyzed in the framework of several models for the voltage dependent breakdown probability. (C) 1998 American Institute of Physics. [S0003-6951(98)04542-2].

引用

页码：2363 / 2365

页数：3

共 12 条

[1]

CHEN IC, 1985, IEEE T ELECTRON DEV, V32, P413, DOI 10.1109/T-ED.1985.21957

[2] A new model for the field dependence of intrinsic and extrinsic time-dependent dielectric breakdown [J].