THICKNESS VARIATION OF BREAKDOWN FIELD STRENGTH IN PLASMA OXIDIZED ALUMINUM FILMS

被引:25
作者
NICOL, WS
机构
来源
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1968年 / 56卷 / 01期
关键词
D O I
10.1109/PROC.1968.6178
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:109 / &
相关论文
共 7 条
[1]   THICKNESS INFLUENCE IN BREAKDOWN PHENOMENA OF THIN DIELECTRIC FILMS [J].
FORLANI, F ;
MINNAJA, N .
PHYSICA STATUS SOLIDI, 1964, 4 (02) :311-324
[2]  
KUBACHEWSKI O, 1953, OXIDATION METALS ALL, P100
[3]  
MERRILL RC, 1963, APR SPRING M EL SOC
[4]   THE FORMATION OF METAL OXIDE FILMS USING GASEOUS AND SOLID ELECTROLYTES [J].
MILES, JL ;
SMITH, PH .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (12) :1240-1245
[5]   ELECTRON TUNNELING THROUGH ASYMMETRIC FILMS OF THERMALLY GROWN AL2O3 [J].
POLLACK, SR ;
MORRIS, CE .
JOURNAL OF APPLIED PHYSICS, 1964, 35 (05) :1503-&
[7]   PLASMA ANODIZED ALUMINUM OXIDE FILMS [J].
TIBOL, GJ ;
HULL, RW .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (12) :1368-1372