Integrated nanotube circuits: Controlled growth and ohmic contacting of single-walled carbon nanotubes

被引:247
作者
Soh, HT [1 ]
Quate, CF
Morpurgo, AF
Marcus, CM
Kong, J
Dai, HJ
机构
[1] Stanford Univ, Edward L Ginzton Lab, Stanford, CA 94305 USA
[2] Stanford Univ, Dept Phys, Stanford, CA 94305 USA
[3] Stanford Univ, Dept Chem, Stanford, CA 94305 USA
关键词
D O I
10.1063/1.124462
中图分类号
O59 [应用物理学];
学科分类号
摘要
Single-walled carbon nanotubes are synthesized by chemical vapor deposition of methane at controlled locations on a substrate using patterned catalytic islands. The combined synthesis and microfabrication technique presented here allows a large number of ohmically contacted nanotube devices with controllable length to be placed on a single substrate. Transport studies demonstrate ohmic contacting, giving two-terminal resistances as low as 20 k Omega at low temperatures. (C) 1999 American Institute of Physics. [S0003-6951(99)01331-5].
引用
收藏
页码:627 / 629
页数:3
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