Enhanced piezoelectric property of barium titanate single crystals with engineered domain configurations

被引:340
作者
Wada, S
Suzuki, S
Noma, T
Suzuki, T
Osada, M
Kakihana, M
Park, SE
Cross, LE
Shrout, TR
机构
[1] Tokyo Univ Agr & Technol, Dept Appl Chem, Tokyo 1848588, Japan
[2] Inst Phys & Chem Res, Wako, Saitama 3510198, Japan
[3] Tokyo Inst Technol, Mat & Struct Lab, Yokohama, Kanagawa 2268502, Japan
[4] Penn State Univ, Mat Res Lab, University Pk, PA 16802 USA
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1999年 / 38卷 / 9B期
关键词
engineered domain configuration; piezoelectric property; barium titanate single crystal; in situ domain observation; in situ Raman measurement; crystallographic orientation; electric-field induced phase transition;
D O I
10.1143/JJAP.38.5505
中图分类号
O59 [应用物理学];
学科分类号
摘要
Piezoelectric properties of barium titanate single crystals were investigated at room temperature as a function of crystallographic orientation. When a unipolar electric field was applied along [001], its strain vs electric-field curve showed a large hysteresis, and finally barium titanate crystal became to single-domain state with piezoelectric constant d(33) of 125 pC/N over 20 kV/cm. On the other hand, electric-field exposure below 6 kV/cm along [111] resulted ina high d(33) of 203 pC/N and a hysteresis-free strain vs electric-field behavior, which suggested the formation of an engineered domain configurarion in a tetragonal barium titanate crystal. Moreover, when an electric field over 6 kV/cm was applied along [111], two discontinuous changes were observed in its strain vs electric-field curve. In situ domain observation and Raman measurement under an electric field suggested an electric-field-induced phase transition from tetragonal to monoclinic at around 10 kV/cm, and that from monoclinic to rhombohedral at around 30 kV/cm. Moreover, in a monoclinic barium titanate crystal, electric-field exposure along [111] resulted in the formation of another new engineered domain configuration with d(33) of 295 pC/N.
引用
收藏
页码:5505 / 5511
页数:7
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