Self-powered and fast-speed photodetectors based on CdS:Ga nanoribbon/Au Schottky diodes

被引：121

作者：

Wu, Di ^{[1
]}

Jiang, Yang ^{[1
]}

Zhang, Yugang ^{[1
]}

Yu, Yongqiang ^{[1
]}

Zhu, Zhifeng ^{[1
]}

Lan, Xinzheng ^{[1
]}

Li, Fangze ^{[2
]}

Wu, Chunyan ^{[2
]}

Wang, Li ^{[2
]}

Luo, Linbao ^{[2
]}

机构：

[1] Hefei Univ Technol, Sch Mat Sci & Engn, Hefei 230009, Anhui, Peoples R China

[2] Hefei Univ Technol, Sch Elect Sci & Appl Phys, Hefei 230009, Anhui, Peoples R China

来源：

JOURNAL OF MATERIALS CHEMISTRY | 2012年 / 22卷 / 43期

基金：

中国国家自然科学基金;

关键词：

PHOTORESPONSE PROPERTIES; SINGLE; NANOWIRES; DEVICES;

D O I：

10.1039/c2jm34869a

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Self-powered photodetectors based on CdS:Ga nanoribbons (NR)/Au Schottky barrier diodes (SBDs) were fabricated. The as-fabricated SBDs exhibit an excellent rectification characteristic with a rectification ratio up to 106 within 1 V in the dark and a distinctive photovoltaic (PV) behavior under light illumination. Photoconductive analysis reveals that the SBDs were highly sensitive to light illumination with very good stability, reproducibility and fast response speeds at zero bias voltage. The corresponding rise/fall times of 95/290 is represent the best values obtained for CdS based nano-photodetectors. It is expected that such self-powered high performance SBD photodetectors will have great potential applications in optoelectronic devices in the future.

引用

页码：23272 / 23276

页数：5

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