Atmospheric-pressure chemical vapor deposition of fluorine-doped tin oxide thin films

被引：37

作者：

Suh, SG

Zhang, ZH

Chu, WK

Hoffman, DM

机构：

[1] Univ Houston, Dept Chem, Houston, TX 77204 USA

[2] Univ Houston, Mat Res Sci & Engn Ctr, Houston, TX 77204 USA

[3] Univ Houston, Texas Ctr Superconduct, Houston, TX 77204 USA

来源：

THIN SOLID FILMS | 1999年 / 345卷 / 02期

基金：

美国国家科学基金会;

关键词：

chemical vapour deposition; tin oxide; fluorine-doped;

D O I：

10.1016/S0040-6090(98)01421-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Fluorine-doped tin oxide films were deposited on silicon, glass and quartz substrates at 370-490 degrees C by atmospheric-pressure chemical vapor deposition from (CH3(CH2)(3))(2)Sn(O2CCF3)(2) and oxygen. Backscattering spectra indicate the films are stoichiometric with O/Sn ratios of 1.9-2.0. Nuclear reaction analysis (NRA) for fluorine gives F/Sn ratios of 0.005-0.015 with the amount of fluorine in the films increasing with increasing deposition temperature. The films are transparent in the visible region (>75%) and have resistivities as low as 8.2 x 10(-4) Ohm cm. X-ray diffraction studies indicate the films deposited on glass are polycrystalline. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：240 / 243

页数：4

共 27 条

[1] About the structural, optical and electrical properties of SnO2 films produced by spray pyrolysis from solutions with low and high contents of fluorine [J].