Preparation of thin-film transistors with chemical bath deposited CdSe and US thin films

被引：74

作者：

Gan, FY ^{[1
]}

Shih, I ^{[1
]}

机构：

[1] McGill Univ, Montreal, PQ H3A 2A7, Canada

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2002年 / 49卷 / 01期

关键词：

chemical bath deposition; thin-film transistors;

D O I：

10.1109/16.974742

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors have fabricated the thin-film transistor (TFT) with CdSe and CdS semiconductor thin films, prepared by a low temperature chemical bath deposition (CBD) method, as an active layer. The ON-current values of the CdSe-TFTs and CdS-TFTs at a gate bias of 10 V and a source-drain voltage of 10 V are about 100 MA and 5 pA, respectively. The OFF-current values of the CdSe-TFTs and CdS-TFTs at the source-drain voltage of 10 V are less than 10 pA. The fabricated CdSe-TFTs exhibited a field effect mobility of 15 cm(2)/V-s, threshold voltage of 3.5 V, subthreshold slope of 0.5 V/dec., and ON/OFF current ratios exceed 10(7). A field effect mobility of 1 cm2/V-s, a threshold voltage of 2.6 V, a subthreshold slope of 0.6 V/dec., and an ON/OFF current ratios exceed 10(6) were observed for CdS TFTs.

引用

页码：15 / 18

页数：4

共 10 条

[1] 6X6 INCH 20 LINES-PER-INCH LIQUID-CRYSTAL DISPLAY PANEL [J].