Progress in IGBT development

被引：30

作者：

Niedernostheide, Franz-Josef ^{[1
]}

Schulze, Hans-Joachim ^{[1
]}

Laska, Thomas ^{[1
]}

Philippou, Alexander ^{[1
]}

机构：

[1] Infineon Technol AG, D-81726 Munich, Germany

来源：

IET POWER ELECTRONICS | 2018年 / 11卷 / 04期

关键词：

insulated gate bipolar transistors; thermal management (packaging); discrete chips; modules; thermal management; improved IGBT ruggedness; vertical concepts; advanced cell concepts; thin-wafer-processing; technological aspects; IGBT development;

D O I：

10.1049/iet-pel.2017.0499

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

080906 [电磁信息功能材料与结构]; 082806 [农业信息与电气工程];

摘要：

Recent progress in insulated gate bipolar transistor (IGBT) development is reviewed. Highlighted issues range from technological aspects such as special processes suitable for thin-wafer-processing, through the advanced cell and vertical concepts to approaches for improved IGBT ruggedness. Latest advancements regarding thermal management in both modules and discrete chips are also addressed.

引用

页码：646 / 653

页数：8

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IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 64 (03) :741-752

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