Low threshold laser-diode side-pumped Tm:YAG and Tm:Ho:YAG lasers

被引：28

作者：

Rustad, G

Stenersen, K

机构：

[1] Norwegian Def. Res. Establishment

[2] Norwegian Institute of Technology, Trondheim

[3] University of Oslo, Oslo

[4] Norwegian Def. Res. Establishment, Kjeller

[5] Hughes Research Laboratories, Malibu, CA

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 1997年 / 3卷 / 01期

关键词：

holmium devices; laser thermal factors; Q-switched lasers; semiconductor laser arrays; solid lasers; thulium devices; transversely excited lasers;

D O I：

10.1109/2944.585818

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 [电气工程]; 0809 [电子科学与技术];

摘要：

We report results from transverse laser-diode pumping of Tm:YAG and Tm:Ho:YAG rods, Using two 60-W quasi-continuous-wave laser-diode bars and a special dielectric coating structure on the barrel surface of the laser rod, laser operation was obtained at room temperature with threshold pump energies below 100 mJ and with output pulse energies above 10 mJ in free-running operation and 2 mJ in Q-switched operation, The Tm:Ho:YAG laser was more susceptible to a temperature increase in the material and performed significantly poorer in the Q-switched mode of operation than the Tm:YAG laser, This was predicted by a model accounting for upconversion and the dynamic equilibrium between the upper levels in thulium and holmium in Tm:Ho:YAG.

引用

页码：82 / 89

页数：8

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