Polarization state-dependent stress effect on the dielectric properties of lead zirconate titanite thin films

被引：12

作者：

Kang, HD ^{[1
]}

Song, WH ^{[1
]}

Sohn, SH ^{[1
]}

Jin, HJ ^{[1
]}

Lee, SE ^{[1
]}

Chung, YK ^{[1
]}

机构：

[1] Samsung Electromech, Electron Mat & Device Lab, Suwon 443743, South Korea

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 17期

关键词：

D O I：

10.1063/1.2198801

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We performed a bending experiment on a thin Pb(Zr,Ti)O-3 (PZT) film prepared by chemical solution deposition. The changes of dielectric constant under stress were measured upon sweeping the electric field applied across the PZT film. It was found that depending on the strength of the electric field and thereby on the polarization state of the ferroelectric film, stress acts as a promoter as well as an obstructor for the polarization. An explanation for the abnormal dielectric behavior is given based on the domain wall motion and the reorientation of polarization state. (c) 2006 American Institute of Physics.

引用

页数：3

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