Microstructural evolution of metal-insulator-metal capacitor prepared by atomic-layer-deposition system at elevated temperature

被引:6
作者
Lin, C. H. [1 ]
Wang, C. C.
Tzeng, P. J.
Liang, C. S.
Lo, W. M.
Li, H. Y.
Lee, L. S.
Lo, S. C.
Chou, Y. W.
Tsai, M. J.
机构
[1] Ind Technol Res Inst, Elect Res & Serv Org, Hsinchu 310, Taiwan
[2] Ind Technol Res Inst, Mat Res Lab, Hsinchu 310, Taiwan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2006年 / 45卷 / 4B期
关键词
atomic layer deposition; titanium nitride; capacitor;
D O I
10.1143/JJAP.45.3036
中图分类号
O59 [应用物理学];
学科分类号
摘要
The rougher surface and raised-hollow holes were observed in the TiN/Al2O3/HfO2/Al2O3/TiN/SiO2/Si multi-stack metalinsulator-metal (MIM) capacitor sample after 1000 degrees C, 60s rapid thermal annealing (RTA) process in N-2. The surface became rougher partially resulted from the nucleation of TiN layer after RTA. Experimental results also indicated that the oxygen content in the HfO2 was desorbed and the remaining Hf was crystallized. Also, the TiN and Al2O3 layers were intermixed and partially re-crystallized at this high temperature. Very clear morie fringes could be observed in the high-resolution transmission electron microscopy (HR-TEM) micrographs. Also, the energy dispersive spectroscopy (EDS) results indicated that the nitrogen in TiN was desorbed and the TiN was phase transformed to TiO2. This phenomenon might result from the TiN oxidation process during the high-temperature thermal annealing.
引用
收藏
页码:3036 / 3039
页数:4
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