Improvement of contact resistance between Ru electrode and TiN barrier in Ru/crystalline-Ta2O5/Ru capacitor for 50 nm dynamic random access memory

被引：4

作者：

Lim, HJ ^{[1
]}

Chung, SJ ^{[1
]}

Lee, KH ^{[1
]}

Lee, J ^{[1
]}

Ktm, JY ^{[1
]}

Yoo, CY ^{[1
]}

Kim, ST ^{[1
]}

Chung, UI ^{[1
]}

Moon, JT ^{[1
]}

机构：

[1] Samsung Elect Co Ltd, Proc Dev Team, Memory Div, Semicond Business, Yongin 449900, Kyungki, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2005年 / 44卷 / 4B期

关键词：

Ru; contact resistance; Ta(2)O(5); TiN; capacitor; oxidation; crystallization;

D O I：

10.1143/JJAP.44.2225

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The contact resistance (R(C)) between a Ru electrode and a TiN plug in a crystalline Ta(2)O(5) capacitor using Ru electrodes was evaluated. The TiN plug was oxidized in TiO(x), to increase the R(C) to failure. Two origins of oxygen are determined by Auger electron spectroscopy (AES) analysis, namely, the seed step of Ru deposition and the initial step of Ta(2)O(5) deposition. During Ta(2)O(5) crystallization annealing at 700 degrees C, the oxygen molecules from Ru diffused into the TiN plug, forming TiO(x). Ru films with Ti exhibited a decreased R(C) below 1 k Omega/contact and an increased leakage current of a Ru/Ta(2)O(5)/Ru capacitor according to the applied voltage, compared with Ru films without Ti. The atomic layer deposition (ALD) Ru process including a H, plasma treatment decreased the R(C) to 2.5 k Omega/contact on average. The fabrication scheme for the crystalline Ta(2)O(5) capacitor using the Ru electrode for reducing R(C) between the Ru storage node and the TiN plug was proposed.

引用

页码：2225 / 2229

页数：5

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