Hexagonal polymorph of tantalum-pentoxide with enhanced dielectric constant

被引：41

作者：

Hiratani, M ^{[1
]}

Kimura, S

Hamada, T

Iijima, S

Nakanishi, N

机构：

[1] Hitachi Ltd, Cent Res Lab, Kokubunji, Tokyo 1858601, Japan

[2] Hitachi Ltd, Adv Res Lab, Kokubunji, Tokyo 1858601, Japan

[3] Hitachi Ltd, Semicond & Integrated Circuits, Tokyo 1988512, Japan

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 13期

关键词：

D O I：

10.1063/1.1509861

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A tantalum-pentoxide dielectric with an enhanced permittivity of over 50 was found to be crystallized in a hexagonal symmetry with a=0.628 nm and c=0.389 nm. The incommensurate epitaxy of tantalum pentoxide on hcp-ruthenium metal stabilizes the hexagonal phase with root3-time periodicity in plane, as compared with that of the known hexagonal delta phase. The crystallographic assumption, which is based on one-dimensional Ta-O-Ta chain along the c axis, can explain large polarizability caused by delocalized electrons on the one-dimensional chain. (C) 2002 American Institute of Physics.

引用

页码：2433 / 2435

页数：3

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