Dimer-anticorrelation-induced stabilization of adsorbate clustering on the Si(100)-(2 x 1) surface

被引:29
作者
Chen, DX [1 ]
Boland, JJ [1 ]
机构
[1] Univ N Carolina, Dept Chem, Venable & Kenan Labs, Chapel Hill, NC 27599 USA
基金
爱尔兰科学基金会;
关键词
D O I
10.1103/PhysRevLett.92.096103
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
It is well established that absorbate-absorbate interactions play a key role in determining the distribution of adsorbates on surfaces. In cases where these interactions are repulsive adsorbates frequently arrange so as to minimize these unfavorable interactions. This simple picture, however, neglects the influence of adsorption on the properties on the underlying substrate. Here, using STM, we show that on Si(100) many intrinsically repulsive adsorbates cluster to form surface patches even at low surface coverages. With the aid of density functional theory calculations and Monte Carlo simulations, we show that patch formation is an intrinsic property of the Si(100) surface that is driven by the energy lowering associated with the formation of extended regions of bare dimers. The enhanced attraction between anticorrelated tilted bare dimers is sufficient to offset the repulsions between adsorbates.
引用
收藏
页码:096103 / 1
页数:4
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