Midinfrared second-harmonic generation in p-type InAs/GaAs self-assembled quantum dots

被引:23
作者
Brunhes, T
Boucaud, P
Sauvage, S
Glotin, F
Prazeres, R
Ortega, JM
Lemaitre, A
Gérard, JM
机构
[1] Univ Paris Sud, Inst Elect Fondamentale, CNRS, UMR 8622, F-91405 Orsay, France
[2] Univ Paris Sud, CLIO, LURE, F-91405 Orsay, France
[3] France Telecom, CNET, F-92225 Bagneux, France
关键词
D O I
10.1063/1.124529
中图分类号
O59 [应用物理学];
学科分类号
摘要
Resonant second-harmonic generation is reported in InAs/GaAs self-assembled quantum dots. Frequency doubling is observed between confined states in the valence band of the quantum dots. The second-order nonlinear susceptibility is maximum at 168 meV (7.4 mu m wavelength) and is observed for an in-plane polarized excitation. A value of chi(zxx)((2)) as large as 2x10(-7) (m/V) is measured for one dot plane. A three-dimensional numerical calculation of the valence band states shows that the second-harmonic generation involves a resonant excitation between the h(000) and h(101) states and a state close to the continuum wetting layer states. (C) 1999 American Institute of Physics. [S0003-6951(99)03932-7].
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收藏
页码:835 / 837
页数:3
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