Midinfrared second-harmonic generation in p-type InAs/GaAs self-assembled quantum dots

被引：23

作者：

Brunhes, T

Boucaud, P

Sauvage, S

Glotin, F

Prazeres, R

Ortega, JM

Lemaitre, A

Gérard, JM

机构：

[1] Univ Paris Sud, Inst Elect Fondamentale, CNRS, UMR 8622, F-91405 Orsay, France

[2] Univ Paris Sud, CLIO, LURE, F-91405 Orsay, France

[3] France Telecom, CNET, F-92225 Bagneux, France

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 06期

关键词：

D O I：

10.1063/1.124529

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Resonant second-harmonic generation is reported in InAs/GaAs self-assembled quantum dots. Frequency doubling is observed between confined states in the valence band of the quantum dots. The second-order nonlinear susceptibility is maximum at 168 meV (7.4 mu m wavelength) and is observed for an in-plane polarized excitation. A value of chi(zxx)((2)) as large as 2x10(-7) (m/V) is measured for one dot plane. A three-dimensional numerical calculation of the valence band states shows that the second-harmonic generation involves a resonant excitation between the h(000) and h(101) states and a state close to the continuum wetting layer states. (C) 1999 American Institute of Physics. [S0003-6951(99)03932-7].

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页码：835 / 837

页数：3

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