InAs/GaAs quantum boxes obtained by self-organized growth: Intrinsic electronic properties and applications

被引：30

作者：

Gerard, JM ^{[1
]}

Marzin, JY ^{[1
]}

Zimmermann, G ^{[1
]}

Ponchet, A ^{[1
]}

Cabrol, O ^{[1
]}

Barrier, D ^{[1
]}

Jusserand, B ^{[1
]}

Sermage, B ^{[1
]}

机构：

[1] CEMES, CNRS, F-31055 TOULOUSE, FRANCE

来源：

SOLID-STATE ELECTRONICS | 1996年 / 40卷 / 1-8期

关键词：

D O I：

10.1016/0038-1101(95)00367-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Spatially or spectrally selective photoluminescence (PL) studies, as well as time-resolved FL, highlight the superior intrinsic electronic properties of InAs/GaAs quantum boxes (QBs) obtained by self-organized molecular beam epitaxy. A given QB displays a single PL line, with linewidth much smaller than the thermal energy kT. The emission of resonantly excited QBs is slightly Stokes shifted (0.7 meV) with respect to their fundamental optical transition. Ultrafast carrier capture and relaxation (approximate to 20 ps) is observed in spite of the large energy between QB levels. Usually foreseen applications of QBs in optoelectronics are however still out of reach due to the inhomogeneous broadening induced by size fluctuations and, for the smaller QBs, thermoemission. Novel applications of such QBs in optoelectronics, such as efficient light emitting diodes on silicon, are proposed and validated experimentally.

引用

页码：807 / 814

页数：8

共 29 条

[1] INTRINSIC MECHANISM FOR THE POOR LUMINESCENCE PROPERTIES OF QUANTUM-BOX SYSTEMS [J].