DIFFERENTIATION OF THE NON RADIATIVE RECOMBINATION PROPERTIES OF THE 2 INTERFACES OF MBE GROWN GAAS-GAALAS QUANTUM-WELLS

被引：5

作者：

GERARD, JM

SERMAGE, B

BERGOMI, L

MARZIN, JY

机构：

[1] Centre National d'Etudes des Télécommunications, 92220 Bagneux

来源：

SUPERLATTICES AND MICROSTRUCTURES | 1990年 / 8卷 / 04期

关键词：

D O I：

10.1016/0749-6036(90)90342-5

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The repartition of non radiative recombination centers density in a quantum well has been tested by time resolved luminescence in samples containing an Indium plane inside a 16 nm wide GaAs well in Ga0.7Al0.3As. The results show unambigously that more non radiative centers are located near the first grown interface. The non radiative carriers lifetime (τnr) vary between 4 ns when the Indium plane is close to the inverted interface and 8 ns when the Indium plane is close to the direct one. © 1990.

引用

页码：417 / 419

页数：3

共 6 条

[1] EFFECTS OF PRELAYERS ON MINORITY-CARRIER LIFETIME IN GAAS/ALGAAS DOUBLE HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J].