SELECTIVE EXCITATION OF THE PHOTOLUMINESCENCE AND THE ENERGY-LEVELS OF ULTRASMALL INGAAS/GAAS QUANTUM DOTS

被引：156

作者：

FAFARD, S

LEONARD, D

MERZ, JL

PETROFF, PM

机构：

[1] UNIV CALIF SANTA BARBARA,DEPT MAT,SANTA BARBARA,CA 93106

[2] UNIV CALIF SANTA BARBARA,DEPT ECE,SANTA BARBARA,CA 93106

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 11期

关键词：

D O I：

10.1063/1.112060

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The energy levels of nanometer size InGaAs quantum dots epitaxially grown on GaAs by the coherent islanding effect are probed using selectively excited photoluminescence (PL), and PL excitation. A lateral-confinement-induced interlevel spacing of approximately 30 meV between the first two states can be deduced from the spectra.

引用

页码：1388 / 1390

页数：3

共 13 条

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