New developments in the heteroepitaxial growth of Be-chalcogenides based semiconducting alloys

被引：14

作者：

Chauvet, C ^{[1
]}

Bousquet, V ^{[1
]}

Tournié, E ^{[1
]}

Faurie, JP ^{[1
]}

机构：

[1] CNRS, CRHEA, F-06560 Valbonne, France

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1999年 / 28卷 / 06期

关键词：

Be-compounds; molecular beam epitaxy (MBE); optical properties;

D O I：

10.1007/s11664-999-0050-x

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have studied the heteroepitaxial growth ofZn(Mg)BeSe alloys on both GaAs and Si substrates. X-ray measurements show that ZnMgBeSe quaternary alloys can be grown with a high structural quality on GaAs(001). Linewidths as low as to 20 arcsec have been obtained from double x-ray diffraction and the etch pit density is in the range of 10(-3) cm(-2). The growth of ZnBeSe ternary alloys on vicinal Si(001) substrates has been investigated. Optical properties of Zn0.55Be0.45Se which is lattice-matched to silicon have been studied by photoluminescence and reflectivity and a fundamental bandgap E-o of 3.85 eV has been measured. Therefore, this material is a potential candidate for ultraviolet B detection. However, it is important to note that these measurements are not conclusive about the direct nature of alloys bandgaps.

引用

页码：662 / 665

页数：4