A high Q, large tuning range, tunable capacitor for RF applications

被引：15

作者：

Borwick, RL ^{[1
]}

Stupar, PA ^{[1
]}

DeNatale, J ^{[1
]}

Anderson, R ^{[1
]}

Tsai, CL ^{[1
]}

Garrett, K ^{[1
]}

机构：

[1] Rockwell Sci Co, Thousand Oaks, CA USA

来源：

FIFTEENTH IEEE INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS, TECHNICAL DIGEST | 2002年

关键词：

D O I：

10.1109/MEMSYS.2002.984359

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Using a new, double-sided adhesive process, an analog tunable capacitor has been designed and fabricated with an extremely large tuning range and a high Q. New design components such as two-sided metal deposition, low resistivity silicon, thicker device layers, and double beam Suspensions have improved RF performance drastically. In the 200-400 MHz range that this device is intended for. Q values are in excess of 100. In addition. an 8.4 to I tuning ratio has been achieved with continuous tuning, over a 1.4 to 11.9 pf range, To further improve dynamic performance, devices were operated in a high viscosity gas environment and near critical damping was achieved.

引用

页码：669 / 672

页数：4

共 5 条

[1]

FENG Z, 2000, SOL STAT SENS ACT WO, P255

[2]

YAO JJ, 2000, SOL STAT SENS ACT WO, P246

[3] A high-Q tunable micromechanical capacitor with movable dielectric for RF applications [J].

Yoon, JB ;

Nguyen, CTC .

INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST, 2000, :489-492

[4]

YOUNG DJ, 1996, SOL STAT SENS ACT WO, P86

[5] Development of a wide tuning range MEMS tunable capacitor for wireless communication systems [J].

Zou, J ;

Liu, C ;

Schutt-Aine, J ;

Chen, JH ;

Kang, SM .

INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST, 2000, :403-406

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