Effects of electron concentration on the optical absorption edge of InN

被引：218

作者：

Wu, J

Walukiewicz, W ^{[1
]}

Li, SX

Armitage, R

Ho, JC

Weber, ER

Haller, EE

Lu, H

Schaff, WJ

Barcz, A

Jakiela, R

机构：

[1] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA

[2] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA

[3] Cornell Univ, Dept Elect & Comp Engn, Ithaca, NY 14853 USA

[4] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 15期

关键词：

D O I：

10.1063/1.1704853

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InN films with free electron concentrations ranging from mid-10(17) to mid-10(20) cm(-3) have been studied using optical absorption, Hall effect, and secondary ion mass spectrometry. The optical absorption edge covers a wide energy range from the intrinsic band gap of InN of about 0.7 to about 1.7 eV which is close to the previously accepted band gap of InN. The electron concentration dependence of the optical absorption edge energy is fully accounted for by the Burstein-Moss shift. Results of secondary ion mass spectrometry measurements indicate that O and H impurities cannot fully account for the free electron concentration in the films. (C) 2004 American Institute of Physics.

引用

页码：2805 / 2807

页数：3

共 23 条

[1] Single-crystalline InN films with an absorption edge between 0.7 and 2 eV grown using different techniques and evidence of the actual band gap energy [J].