All-Polymer Bistable Resistive Memory Device Based on Nanoscale Phase-Separated PCBM-Ferroelectric Blends

被引：71

作者：

Khan, M. A. ^{[1
]}

Bhansali, Unnat S. ^{[1
]}

Cha, Dongkyu ^{[1
]}

Alshareef, H. N. ^{[1
]}

机构：

[1] King Abdullah Univ Sci & Technol KAUST, Thuwal 239556900, Saudi Arabia

来源：

ADVANCED FUNCTIONAL MATERIALS | 2013年 / 23卷 / 17期

关键词：

polymer; blend; memory; ferroelectric; PCBM; NONVOLATILE MEMORIES; FILMS; COPOLYMERS; OXIDE;

D O I：

10.1002/adfm.201202724

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

All polymer nonvolatile bistable memory devices are fabricated from blends of ferroelectric poly(vinylidenefluoridetrifluoroethylene (P(VDF-TrFE)) and n-type semiconducting [6,6]-phenyl-C61-butyric acid methyl ester (PCBM). The nanoscale phase separated films consist of PCBM domains that extend from bottom to top electrode, surrounded by a ferroelectric P(VDF-TrFE) matrix. Highly conducting poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) polymer electrodes are used to engineer band offsets at the interfaces. The devices display resistive switching behavior due to modulation of this injection barrier. With careful optimization of the solvent and processing conditions, it is possible to spin cast very smooth blend films (Rrms approximate to 7.94 nm) and with good reproducibility. The devices exhibit high Ion/Ioff ratios (approximate to 3 x 103), low read voltages (approximate to 5 V), excellent dielectric response at high frequencies (Er approximate to 8.3 at 1 MHz), and excellent retention characteristics up to 10 000 s.

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页码：2145 / 2152

页数：8

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