Flexible organic bistable devices based on [6,6]-phenyl-C85 butyric acid methyl ester clusters embedded in a polymethyl methacrylate layer
被引:13
作者:
Lee, Min Ho
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Hanyang Univ, Dept Elect & Comp Engn, Seoul 133791, South KoreaHanyang Univ, Dept Elect & Comp Engn, Seoul 133791, South Korea
Lee, Min Ho
[1
]
Yun, Dong Yeol
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Hanyang Univ, Dept Nanoscale Semicond Engn, Seoul 133791, South KoreaHanyang Univ, Dept Elect & Comp Engn, Seoul 133791, South Korea
Yun, Dong Yeol
[2
]
Park, Hun Min
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Hanyang Univ, Dept Elect & Comp Engn, Seoul 133791, South KoreaHanyang Univ, Dept Elect & Comp Engn, Seoul 133791, South Korea
Park, Hun Min
[1
]
Kim, Tae Whan
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Hanyang Univ, Dept Elect & Comp Engn, Seoul 133791, South Korea
Hanyang Univ, Dept Nanoscale Semicond Engn, Seoul 133791, South KoreaHanyang Univ, Dept Elect & Comp Engn, Seoul 133791, South Korea
Kim, Tae Whan
[1
,2
]
机构:
[1] Hanyang Univ, Dept Elect & Comp Engn, Seoul 133791, South Korea
[2] Hanyang Univ, Dept Nanoscale Semicond Engn, Seoul 133791, South Korea
Flexible organic bistable devices (OBDs) consisting of [6,6]-phenyl-C85 butyric acid methyl ester ([84]PCBM) blended with a polymethyl methacrylate (PMMA) layer were fabricated on indiumt-in-oxide (ITO) coated polyethylene terephthalate (PET) substrates. Current-voltage curves of the Al/[84] PCBM:PMMA/ITO/PET device at 300K showed a current bistability. The maximum ON/OFF ratios of the OBDs at flat and bent conditions were about 7.5 x 10(2) and 2.7 x 10(3), respectively. The cycle endurance was larger than 1 x 10(5) cycles. The memory mechanisms of the OBDs were attributed to trapping and detrapping processes of electrons into and from the PCBM clusters. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3656968]