Modelling of gate-induced spin precession in a striped channel high electron mobility transistor

A new concept of field effect transistor was proposed by Datta and Das [Appl. Phys. Lett. 56, 1990, 665]: a spin-polarized high electron mobility transistor. It applies specific properties of ferromagnetic contacts and of spin-orbit coupling in gated modulation doped III-V heterostructures. We introduce the spin precession mechanism in a Monte Carlo transport model, in order to quantify the potential electrical properties of such a structure. If spin polarization of injected electrons is high enough, at least 30%, the gate-controlled spin rotation may yield an increase of transconductance or a large negative transconductance effect. (C) 1997 Elsevier Science Ltd.