Photoluminescence study of Si1-xGex/Si surface quantum wells

被引：6

作者：

Kishimoto, Y ^{[1
]}

Shiraki, Y ^{[1
]}

Fukatsu, S ^{[1
]}

机构：

[1] UNIV TOKYO,RCAST,MEGURO KU,TOKYO 153,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 21期

关键词：

D O I：

10.1063/1.119019

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a photoluminescence (PL) study of Si1-xGex/Si surface quantum wells (SFQWs). The PL peak energies are found to be affected by strain relaxation in Ge-rich SFQWs while a PL energy lowering was observed for x less than or equal to 0.47 as compared to buried quantum wells capped with Si. Exciton localization in the lateral direction is suggested to be the dominant PL mechanism in SFQWs rather than perpendicular confinement effects that are expected for SFQWs. PL degradation and a spectral dominance switch over to newly developing lower energy peaks were clearly observed after prolonged air exposure. (C) 1997 American institute of Physics.

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页码：2837 / 2839

页数：3

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