Quantitative analysis of light emission from SiGe quantum wells

被引：25

作者：

Fukatsu, S ^{[1
]}

Akiyama, H ^{[1
]}

Shiraki, Y ^{[1
]}

Sakaki, H ^{[1
]}

机构：

[1] UNIV TOKYO,ADV SCI & TECHNOL RES CTR,MEGURO KU,TOKYO 153,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1995年 / 157卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(95)00365-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Spontaneous emission from strained Si1-xGex/Si quantum wells (QW) and allied structures is explored with primary focus on optical characterization in the time domain. Time-correlated single photon counting method is used with complementary steady-state analysis to solicit a wealth of otherwise evasive information on the basis of steady-state measurement alone. Two-dimensional nature of quantum-confined free excitons in strained Si1-xGex/Si QWs, carrier dynamics associated with exciton localization in superlattices, and surface recombination kinetics in near surface quantum confined geometry are described to demonstrate the potential of combined use of time-resolved and steady-state luminescence analysis for characterization of indirect gap strained Si1-xGex/Si QWs.

引用

页码：1 / 10

页数：10

共 29 条

[1] THERMALIZATION EFFECT ON RADIATIVE DECAY OF EXCITONS IN QUANTUM WIRES
AKIYAMA, H
KOSHIBA, S
SOMEYA, T
WADA, K
NOGE, H
NAKAMURA, Y
INOSHITA, T
SHIMIZU, A
SAKAKI, H
[J]. PHYSICAL REVIEW LETTERS, 1994, 72 (06) : 924 - 927
[2] TYPE-II BAND ALIGNMENT IN SI/SI1-XGEX QUANTUM-WELLS FROM PHOTOLUMINESCENCE LINE SHIFTS DUE TO OPTICALLY INDUCED BAND-BENDING EFFECTS - EXPERIMENT AND THEORY
BAIER, T
MANTZ, U
THONKE, K
SAUER, R
SCHAFFLER, F
HERZOG, HJ
[J]. PHYSICAL REVIEW B, 1994, 50 (20): : 15191 - 15196
[3] BAND-GAP LUMINESCENCE IN PSEUDOMORPHIC SI1-XGEX QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY
BRUNNER, J
MENCZIGAR, U
GAIL, M
FRIESS, E
ABSTREITER, G
[J]. THIN SOLID FILMS, 1992, 222 (1-2) : 27 - 29
[4] BRUNNER J, 1993, J CRYST GROWTH, V124, P443
[5] EXCITONIC PHOTOLUMINESCENCE FROM SI-CAPPED STRAINED SI1-XGEX LAYERS
DUTARTRE, D
BREMOND, G
SOUIFI, A
BENYATTOU, T
[J]. PHYSICAL REVIEW B, 1991, 44 (20): : 11525 - 11527
[6] ENGVAL J, 1994, PHYS REV B, V51, P2001
[7] LINEWIDTH DEPENDENCE OF RADIATIVE EXCITON LIFETIMES IN QUANTUM-WELLS
FELDMANN, J
PETER, G
GOBEL, EO
DAWSON, P
MOORE, K
FOXON, C
ELLIOTT, RJ
[J]. PHYSICAL REVIEW LETTERS, 1987, 59 (20) : 2337 - 2340
[8] RESONANT ELECTRON-CAPTURE IN ALXGA1-XAS/ALAS/GAAS QUANTUM-WELLS
FUJIWARA, A
TAKAHASHI, Y
FUKATSU, S
SHIRAKI, Y
ITO, R
[J]. PHYSICAL REVIEW B, 1995, 51 (04): : 2291 - 2301
[9] LUMINESCENCE FROM STRAINED SI1-XGEX/SI QUANTUM-WELLS GROWN BY SI MOLECULAR-BEAM EPITAXY
FUKATSU, S
USAMI, N
SHIRAKI, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (3B): : 1502 - 1507
[10] OPTICAL INVESTIGATION OF INTERWELL COUPLING IN STRAINED SI(1-X)GE(X)/SI QUANTUM-WELLS
FUKATSU, S
SHIRAKI, Y
[J]. APPLIED PHYSICS LETTERS, 1993, 63 (17) : 2378 - 2380

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