BAND-GAP LUMINESCENCE IN PSEUDOMORPHIC SI1-XGEX QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY

被引：33

作者：

BRUNNER, J

MENCZIGAR, U

GAIL, M

FRIESS, E

ABSTREITER, G

机构：

来源：

THIN SOLID FILMS | 1992年 / 222卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(92)90031-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present photoluminescence studies of SiGe quantum wells with different well widths. Special attention is paid to the influence of growth conditions on the spectra. Growth temperatures above 600-degrees-C are found to be a prerequisite for a good layer quality. With optimized growth conditions, strong excitonic dominated luminescence with full width at half-maximum values as low as 4.5 meV has been achieved for narrow quantum wells. The variation in the luminescence energy with germanium content and well width is well described by theory.

引用

页码：27 / 29

页数：3

共 16 条

[1] GEXSI1-X/SI STRAINED-LAYER SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY
BEAN, JC
FELDMAN, LC
FIORY, AT
NAKAHARA, S
ROBINSON, IK
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02): : 436 - 440
[2] VALENCE-BAND OFFSETS AT STRAINED SI/GE INTERFACES
COLOMBO, L
RESTA, R
BARONI, S
[J]. PHYSICAL REVIEW B, 1991, 44 (11): : 5572 - 5579
[3] EXCITONIC PHOTOLUMINESCENCE FROM SI-CAPPED STRAINED SI1-XGEX LAYERS
DUTARTRE, D
BREMOND, G
SOUIFI, A
BENYATTOU, T
[J]. PHYSICAL REVIEW B, 1991, 44 (20): : 11525 - 11527
[4] THEORY OF DIRECT OPTICAL-TRANSITIONS IN AN OPTICAL INDIRECT SEMICONDUCTOR WITH A SUPERLATTICE STRUCTURE
GNUTZMAN.U
CLAUSECK.K
[J]. APPLIED PHYSICS, 1974, 3 (01): : 9 - 14
[5] ONE-DIMENSIONAL SIGE SUPERLATTICE GROWN BY UHV EPITAXY
KASPER, E
HERZOG, HJ
KIBBEL, H
[J]. APPLIED PHYSICS, 1975, 8 (03): : 199 - 205
[6] PHOTOLUMINESCENCE STUDIES OF SI/SI1-XGEX QUANTUM-WELLS AND SIMGEN SUPERLATTICES
MENCZIGAR, U
BRUNNER, J
FRIESS, E
GAIL, M
ABSTREITER, G
KIBBEL, H
PRESTING, H
KASPER, E
[J]. THIN SOLID FILMS, 1992, 222 (1-2) : 227 - 233
[7] INTENSE PHOTOLUMINESCENCE BETWEEN 1.3-MU AND 1.8-MU-M FROM STRAINED SI1-XGEX ALLOYS
NOEL, JP
ROWELL, NL
HOUGHTON, DC
PEROVIC, DD
[J]. APPLIED PHYSICS LETTERS, 1990, 57 (10) : 1037 - 1039
[8] ELECTROLUMINESCENCE FROM A PSEUDOMORPHIC SI0.8GE0.2 ALLOY
ROBBINS, DJ
CALCOTT, P
LEONG, WY
[J]. APPLIED PHYSICS LETTERS, 1991, 59 (11) : 1350 - 1352
[9] ELECTROLUMINESCENCE AND PHOTOLUMINESCENCE FROM SI1-XGEX ALLOYS
ROWELL, NL
NOEL, JP
HOUGHTON, DC
BUCHANAN, M
[J]. APPLIED PHYSICS LETTERS, 1991, 58 (09) : 957 - 958
[10] RESONANT TUNNELING OF HOLES IN SI/SIXGE1-X QUANTUM-WELL STRUCTURES
SCHUBERTH, G
ABSTREITER, G
GORNIK, E
SCHAFFLER, F
LUY, JF
[J]. PHYSICAL REVIEW B, 1991, 43 (03): : 2280 - 2284

← 1 2 →