RESONANT TUNNELING OF HOLES IN SI/SIXGE1-X QUANTUM-WELL STRUCTURES

被引：34

作者：

SCHUBERTH, G ^{[1
]}

ABSTREITER, G ^{[1
]}

GORNIK, E ^{[1
]}

SCHAFFLER, F ^{[1
]}

LUY, JF ^{[1
]}

机构：

[1] DAIMLER BENZ AG,FORSCHUNGSZENTRUM ULM,W-7900 ULM,GERMANY

来源：

PHYSICAL REVIEW B | 1991年 / 43卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.43.2280

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Resonant tunneling of holes in Si/Si(x)Ge1-x systems is investigated. From the comparison between theory and experiment, we find clear evidence for resonant tunneling of incoming heavy holes through light-hole state in the well. Measurements with magnetic fields applied parallel and perpendicular to the layers confirm this interpretation. With the magnetic field parallel to the current, Landau levels are observed in the derivatives of the tunneling characteristics. From the Landau-level spacing the in-plane effective mass in the well is extracted.

引用

页码：2280 / 2284

页数：5

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