RESONANT TUNNELING THROUGH A SI/GEXSI1-X/SI HETEROSTRUCTURE ON A GESI BUFFER LAYER

被引：78

作者：

RHEE, SS

PARK, JS

KARUNASIRI, RPG

YE, Q

WANG, KL

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 03期

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D O I：

10.1063/1.100148

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：204 / 206

页数：3

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