PHOTOLUMINESCENCE STUDIES OF SI/SI1-XGEX QUANTUM-WELLS AND SIMGEN SUPERLATTICES

被引：23

作者：

MENCZIGAR, U ^{[1
]}

BRUNNER, J ^{[1
]}

FRIESS, E ^{[1
]}

GAIL, M ^{[1
]}

ABSTREITER, G ^{[1
]}

KIBBEL, H ^{[1
]}

PRESTING, H ^{[1
]}

KASPER, E ^{[1
]}

机构：

[1] DAIMLER BENZ AG,RES CTR ULM,W-7900 ULM,GERMANY

来源：

THIN SOLID FILMS | 1992年 / 222卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(92)90074-L

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on photoluminescence studies of Si/Si1-xGex quantum wells with systematically varied growth temperatures and well thicknesses. Well resolved band gap luminescence could be observed in quantum well structures grown at temperatures above 600-degrees-C while for structures grown at lower temperatures defect-related lines dominate the luminescence spectra. We also present photoluminescence and electroluminescence studies for a strain-symmetrized Si5Ge5 superlattice. The photoluminescence observed below the band gap of the corresponding alloy is shown to be enhanced by growing the superlattice on a thick, single-step alloy buffer layer. Absorption measurements on the superlattice show an onset of the absorbance at an energetic position close to the observed photoluminescence. These findings provide strong evidence for band gap related photoluminescence and electroluminescence in a strain-symmetrized Si5Ge5 superlattice.

引用

页码：227 / 233

页数：7

共 47 条

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