OPTICAL INVESTIGATION OF INTERWELL COUPLING IN STRAINED SI(1-X)GE(X)/SI QUANTUM-WELLS

被引：42

作者：

FUKATSU, S

SHIRAKI, Y

机构：

[1] Photonic Materials, Research Center for Advanced Science and Technology (RCAST), University of Tokyo, Meguro-ku, Tokyo 153

[2] Advanced Materials, Research Center for Advanced Science and Technology (RCAST), University of Tokyo, Meguro-ku, Tokyo 153

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 17期

关键词：

D O I：

10.1063/1.110480

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photoluminescence is reported in strained Si1-xGex/Si(100) coupled double quantum well (CDQW) systems. Systematic red shift of luminescence energy was found in symmetric CDQWs with decreasing width of the Si barrier centered at the DQW, the characteristics of which were used to determine the band offsets. The total and valence-band discontinuities, DELTAE(c)+DELTAE(v)=156 meV and DELTAE(v)=149+/-1 meV, were obtained, suggesting that the band alignment is of type I for x=0.177. Variation of the inserted Si barrier width in asymmetric CDWs revealed well-resolved spectral evolution due to the reduction in tunneling-controlled carrier escape competing with the radiative recombination.

引用

页码：2378 / 2380

页数：3

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