OPTICAL-DETECTION OF INTERWELL-EXCITON TRANSFER IN IN0.53GA0.47AS/INP QUANTUM-WELLS GROWN BY CHEMICAL BEAM EPITAXY

被引：11

作者：

SAUER, R

HARRIS, TD

TSANG, WT

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 16期

关键词：

D O I：

10.1063/1.97975

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1077 / 1079

页数：3

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[2] SPECTROSCOPY OF EXCITED-STATES IN IN0.53GA0.47AS-INP SINGLE QUANTUM-WELLS GROWN BY CHEMICAL-BEAM EPITAXY
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[5] GA0.47IN0.53AS/INP SUPERLATTICES GROWN BY CHEMICAL BEAM EPITAXY - ABSORPTION, PHOTOLUMINESCENCE EXCITATION, AND PHOTOCURRENT SPECTROSCOPIES
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[6] CHEMICAL BEAM EPITAXIAL-GROWTH OF EXTREMELY HIGH-QUALITY INGAAS ON INP
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[7] EXTREMELY HIGH-QUALITY GA0.47IN0.53AS/INP QUANTUM-WELLS GROWN BY CHEMICAL BEAM EPITAXY
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