SPECTRAL BLUE SHIFT OF PHOTOLUMINESCENCE IN STRAINED-LAYER SI1-XGEX/SI QUANTUM-WELL STRUCTURES GROWN BY GAS-SOURCE SI MOLECULAR-BEAM EPITAXY

被引:76
作者
FUKATSU, S [1 ]
YOSHIDA, H [1 ]
FUJIWARA, A [1 ]
TAKAHASHI, Y [1 ]
SHIRAKI, Y [1 ]
ITO, R [1 ]
机构
[1] UNIV TOKYO,FAC ENGN,DEPT APPL PHYS,TOKYO 113,JAPAN
关键词
D O I
10.1063/1.107770
中图分类号
O59 [应用物理学];
学科分类号
摘要
Spectral blue shift of excitonic transition due to quantum confinement in Si0.84Ge0.16/Si strained-layer quantum wells, grown by gas-source Si molecular beam epitaxy, is reported. Intense photoluminescence was observed at elevated temperatures though reduced in intensity due to the thermalization of holes to the Si barriers.
引用
收藏
页码:804 / 806
页数:3
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