ISOELECTRONIC BOUND EXCITON EMISSION FROM SI-RICH SILICON-GERMANIUM ALLOYS

被引：17

作者：

MODAVIS, RA ^{[1
]}

HALL, DG ^{[1
]}

BEVK, J ^{[1
]}

FREER, BS ^{[1
]}

FELDMAN, LC ^{[1
]}

WEIR, BE ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 10期

关键词：

D O I：

10.1063/1.103523

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the observation and characterization of luminescence in the wavelength range 1.1 μm<λ< 1.4 μm from silicon-rich silicon-germanium alloys, grown by molecular beam epitaxy, implanted with beryllium atoms. The luminescence originates with the radiative decay of an exciton bound to an isoelectronic impurity complex. The wavelength of this emission can be controlled by varying the Ge concentration.

引用

页码：954 / 956

页数：3

共 22 条

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