STUDY OF BERYLLIUM AND BERYLLIUM-LITHIUM COMPLEXES IN SINGLE-CRYSTAL SILICON

[1] AGGARWAL RL, 1965, PHYS REV A, V138, P882

[2] BAKER JM, PRIVATE COMMUNICATIO

[3] INFLUENCE OF HYDROSTATIC PRESSURE AND TEMPERATURE ON DEEP DONOR LEVELS OF SULFUR IN SILICON [J]. PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (06): : 1899 - +

[4] THERMAL IONIZATION ENERGY OF LITHIUM AND LITHIUM-OXYGEN COMPLEXES IN SINGLE-CRYSTAL SILICON [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1969, 30 (08) : 2037 - &

[5] ABSORPTION SPECTRA AND ZEEMAN EFFECT OF COPPER AND ZINC IMPURITIES IN GERMANIUM [J]. PHYSICAL REVIEW LETTERS, 1960, 5 (05) : 195 - 197

[6] MAGNESIUM AS A DONOR IMPURITY IN SILICON [J]. SOLID STATE COMMUNICATIONS, 1967, 5 (06) : 479 - +

[7] EXCITATION SPECTRA AND PIEZOSPECTROSCOPIC EFFECTS OF NEUTRAL AND SINGLY IONIZED MAGNESIUM DONORS IN SILICON [J]. PHYSICS LETTERS A, 1970, A 32 (01) : 23 - &

[8] KRAG WE, 1966, J PHYS SOC JPN, VS 21, P230

[9] MORGAN TN, 1970, 10 P INT C PHYS SEM

[10] SPECTROSCOPIC INVESTIGATION OF GROUP-3 ACCEPTOR STATES IN SILICON [J]. PHYSICAL REVIEW, 1967, 163 (03): : 686 - &

[1] AGGARWAL RL, 1965, PHYS REV A, V138, P882

[2] BAKER JM, PRIVATE COMMUNICATIO

[3] INFLUENCE OF HYDROSTATIC PRESSURE AND TEMPERATURE ON DEEP DONOR LEVELS OF SULFUR IN SILICON [J]. PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (06): : 1899 - +

[4] THERMAL IONIZATION ENERGY OF LITHIUM AND LITHIUM-OXYGEN COMPLEXES IN SINGLE-CRYSTAL SILICON [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1969, 30 (08) : 2037 - &

[5] ABSORPTION SPECTRA AND ZEEMAN EFFECT OF COPPER AND ZINC IMPURITIES IN GERMANIUM [J]. PHYSICAL REVIEW LETTERS, 1960, 5 (05) : 195 - 197

[6] MAGNESIUM AS A DONOR IMPURITY IN SILICON [J]. SOLID STATE COMMUNICATIONS, 1967, 5 (06) : 479 - +

[7] EXCITATION SPECTRA AND PIEZOSPECTROSCOPIC EFFECTS OF NEUTRAL AND SINGLY IONIZED MAGNESIUM DONORS IN SILICON [J]. PHYSICS LETTERS A, 1970, A 32 (01) : 23 - &

[8] KRAG WE, 1966, J PHYS SOC JPN, VS 21, P230

[9] MORGAN TN, 1970, 10 P INT C PHYS SEM

[10] SPECTROSCOPIC INVESTIGATION OF GROUP-3 ACCEPTOR STATES IN SILICON [J]. PHYSICAL REVIEW, 1967, 163 (03): : 686 - &