EXCITATION SPECTRA AND PIEZOSPECTROSCOPIC EFFECTS OF NEUTRAL AND SINGLY IONIZED MAGNESIUM DONORS IN SILICON

被引:8
作者
HO, LT
RAMDAS, AK
机构
关键词
D O I
10.1016/0375-9601(70)90062-9
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:23 / &
相关论文
共 5 条
[1]   EFFECT OF UNIAXIAL STRESS ON EXICTATION SPECTRA OF DONORS IN SILICON [J].
AGGARWAL, RL ;
RAMDAS, AK .
PHYSICAL REVIEW, 1965, 137 (2A) :A602-&
[2]   HIGHER DONOR EXCITED STATES FOR PROLATE-SPHEROID CONDUCTION BANDS - A REEVALUATION OF SILICON AND GERMANIUM [J].
FAULKNER, RA .
PHYSICAL REVIEW, 1969, 184 (03) :713-&
[3]  
FISHER, 1969, SOLID STATE PHYSICS, P149
[4]   MAGNESIUM AS A DONOR IMPURITY IN SILICON [J].
FRANKS, RK ;
ROBERTSON, JB .
SOLID STATE COMMUNICATIONS, 1967, 5 (06) :479-+
[5]  
KRAG WE, 1966, J PHYS SOC JPN, VS 21, P230