RADIATIVE DECAY OF EXCITONS BOUND TO CHALCOGEN-RELATED ISOELECTRONIC IMPURITY COMPLEXES IN SILICON

被引：26

作者：

BRADFIELD, PL

BROWN, TG

HALL, DG

机构：

来源：

PHYSICAL REVIEW B | 1988年 / 38卷 / 05期

关键词：

D O I：

10.1103/PhysRevB.38.3533

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

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页码：3533 / 3536

页数：4

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