共 15 条
- [1] STUDY OF BERYLLIUM AND BERYLLIUM-LITHIUM COMPLEXES IN SINGLE-CRYSTAL SILICON [J]. PHYSICAL REVIEW B, 1972, 5 (08): : 3111 - &
- [2] Dean P. J., 1979, Excitons, P55, DOI 10.1007/978-3-642-81368-9_3
- [3] EXCITATION DENSITY DEPENDENCE OF LUMINESCENCE FROM BOUND MULTI-EXCITON COMPLEXES IN PHOSPHORUS DOPED SILICON [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1978, 11 (13): : L555 - L558
- [4] HENRY MS, UNPUBLISHED
- [6] ZEEMAN STUDIES OF THE 0.839EV EMISSION IN SI GAAS-CR [J]. SOLID STATE COMMUNICATIONS, 1980, 35 (04) : 333 - 337
- [7] KILLORAN N, UNPUBLISHED
- [8] SHELL-MODEL OF BOUND MULTIEXCITON COMPLEXES IN SILICON [J]. CANADIAN JOURNAL OF PHYSICS, 1977, 55 (20) : 1787 - 1801
- [9] FINE-STRUCTURE IN BOUND EXCITON AND MULTIPLE BOUND EXCITON LUMINESCENCE FROM ALUMINUM-DOPED SILICON [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1977, 10 (09): : L247 - L250
- [10] STRESS EFFECTS ON EXCITONS BOUND TO AXIALLY SYMMETRIC DEFECTS IN SEMICONDUCTORS [J]. PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (02): : 739 - &