STRESS EFFECTS ON EXCITONS BOUND TO AXIALLY SYMMETRIC DEFECTS IN SEMICONDUCTORS

被引：53

作者：

MORGAN, JVW

MORGAN, TN

机构：

来源：

PHYSICAL REVIEW B-SOLID STATE | 1970年 / 1卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.1.739

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：739 / &

共 29 条

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