EXCITATION DENSITY DEPENDENCE OF LUMINESCENCE FROM BOUND MULTI-EXCITON COMPLEXES IN PHOSPHORUS DOPED SILICON

被引：7

作者：

HENRY, MO

LIGHTOWLERS, EC

机构：

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1978年 / 11卷 / 13期

关键词：

D O I：

10.1088/0022-3719/11/13/011

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

收藏

页码：L555 / L558

页数：4

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[7] EXPERIMENTAL-EVIDENCE AGAINST SHELL-MODEL OF BOUND MULTIEXCITON COMPLEXES IN SILICON
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[8] EXCITED-STATES OF DONOR BOUND EXCITONS AND BOUND MULTI-EXCITON COMPLEXES IN SILICON
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[J]. SOLID STATE COMMUNICATIONS, 1977, 21 (10) : 937 - 939
[9] EXPERIMENTAL-EVIDENCE AGAINST SHELL-MODEL OF BOUND MULTIEXCITON COMPLEXES IN SILICON - COMMENTS
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[J]. SOLID STATE COMMUNICATIONS, 1978, 25 (08) : 513 - 517
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