RESOLVED FINE-STRUCTURE OF EXCITON COMPLEXES BOUND TO PHOSPHORUS IMPURITIES IN SILICON

被引:23
作者
PARSONS, RR [1 ]
机构
[1] UNIV BRITISH COLUMBIA,DEPT PHYS,VANCOUVER V6T 1W5,BRITISH COLUMBI,CANADA
关键词
D O I
10.1016/0038-1098(77)90246-0
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:671 / 673
页数:3
相关论文
共 18 条
[1]   PHONON BROADENING OF IMPURITY SPECTRAL LINES .2. APPLICATION TO SILICON [J].
BARRIE, R ;
NISHIKAWA, K .
CANADIAN JOURNAL OF PHYSICS, 1963, 41 (11) :1823-&
[2]   SPIN AND COMBINED RESONANCE ON ACCEPTOR CENTRES IN GE AND SI TYPE CRYSTALS .1. PARAMAGNETIC RESONANCE IN STRAINED AND UNSTRAINED CRYSTALS [J].
BIR, GL ;
PIKUS, GE ;
BUTIKOV, EI .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1963, 24 (12) :1467-+
[3]  
BIR GL, 1963, PHYS CHEM SOLIDS, V24, P1475
[4]   ABSORPTION DUE TO BOUND EXCITONS IN SILICON [J].
DEAN, PJ ;
FLOOD, WF ;
KAMINSKY, G .
PHYSICAL REVIEW, 1967, 163 (03) :721-&
[5]   DONOR EXCITON SATELLITES IN CUBIC SILICON-CARBIDE - MULTIPLE BOUND EXCITONS REVISITED [J].
DEAN, PJ ;
HERBERT, DC ;
BIMBERG, D ;
CHOYKE, WJ .
PHYSICAL REVIEW LETTERS, 1976, 37 (24) :1635-1638
[6]   EXPERIMENTAL PROOF OF THE EXISTENCE OF A NEW ELECTRONIC COMPLEX IN SILICON [J].
HAYNES, JR .
PHYSICAL REVIEW LETTERS, 1960, 4 (07) :361-363
[7]  
KAMINSKII AS, 1971, SOV PHYS JETP-USSR, V32, P1048
[8]   NEW MODEL FOR BOUND MULTI-EXCITON COMPLEXES [J].
KIRCZENOW, G .
SOLID STATE COMMUNICATIONS, 1977, 21 (08) :713-715
[9]   SHALLOW IMPURITY STATES IN SILICON AND GERMANIUM [J].
KOHN, W .
SOLID STATE PHYSICS-ADVANCES IN RESEARCH AND APPLICATIONS, 1957, 5 :257-320
[10]   NEW PHOTOLUMINESCENCE LINE-SERIES SPECTRA ATTRIBUTED TO DECAY OF MULTIEXCITON COMPLEXES BOUND TO LI, B, AND P CENTERS IN SI [J].
KOSAI, K ;
GERSHENZ.M .
PHYSICAL REVIEW B, 1974, 9 (02) :723-726